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Gunn Diodes
The Gunn oscillator diode is the best known and most readily available device in the family of transferred electron devices (TED). They are employed as DC to microwave converters using the negative resistance characteristics of bulk Gallium Arsenide(GaAs) and only require a standard, low impedance, constant voltage power supply, thereby eliminating complex circuitry.
LEMS can manufacture bespoke Gunn diodes given a specified frequency, application & package.
Download our type list & build your own part number
For further information please contact us at enquiries(at)linwave.co.uk.
DC1276G-T Gunn Diode
Gallium Arsenide graded gap Gunn diode assembled in custom package for fundamental mode of operation in the 26 to 40 GHz band.
DC1276H Gunn Diode
Gallium Arsenide graded gap Gunn diode assembled in custom package for fundamental mode of operation in the 26 to 40 GHz band.
DC1277F-T Gunn Diode
Gallium Arsenide graded gap Gunn diode assembled in custom package for fundamental mode of operation in the 40 to 60 GHz band.
DC1278F-T Gunn Diode
Gallium Arsenide graded gap Gunn diode assembled in custom package for fundamental mode of operation in the 60 to 75 GHz band.
DC1279F-T Gunn Diode
Gallium Arsenide graded gap Gunn diode assembled in custom package for fundamental mode of operation in the 76 to 78 GHz band.
